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PubMed2001

Radio-frequency single-electron transistor as readout device for qubits: charge sensitivity and backaction.

We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3microe/sqrt[Hz] and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.

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PubMed2004

Quantum-limited sensitivity of single-electron-transistor-based displacement detectors.

We consider a model of a quantum-mechanical resonator capacitively coupled to a single electron transistor (SET). The tunnel current in the SET is modulated by the vibrations of the resonator, and thus the system operates as a displacement detector. We analyze the effect of the backaction noise of charge fluctuations in the SET onto the dynamics of the resonator and evaluate the displacement sensitivity of the system. The relation between the "classical" and "quantum" parts of the SET charge noise and their effect on the measured system are also discussed.

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PubMed2000

Amplifying quantum signals with the single-electron transistor

Transistors have continuously reduced in size and increased in switching speed since their invention in 1947. The exponential pace of transistor evolution has led to a revolution in information acquisition, processing and communication technologies. And reigning over most digital applications is a single device structure--the field-effect transistor (FET). But as device dimensions approach the nanometre scale, quantum effects become increasingly important for device operation, and conceptually new transistor structures may need to be adopted. A notable example of such a structure is the single-electron transistor, or SET. Although it is unlikely that SETs will replace FETs in conventional electronics, they should prove useful in ultra-low-noise analog applications. Moreover, because it is not affected by the same technological limitations as the FET, the SET can approach closely the quantum limit of sensitivity. It might also be a useful read-out device for a solid-state quantum computer.

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PubMed1998

The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer

A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic "dual" of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from dc to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 x 10(-5) e/hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/f-noise-limited SET, and corresponds to an energy sensitivity (in joules per hertz) of about 41 Planck's over 2pi.

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PubMed2006

Spin-dependent quasiparticle transport in aluminum single-electron transistors.

We investigate the effect of Zeeman splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single-electron transistors (SETs). In the above-gap transport, the interplay of Coulomb blockade and Zeeman splitting leads to spin-dependence of the sequential tunneling. This creates regimes where either one or both spin species can tunnel onto or off the island. At lower biases, spin-dependence of the single quasiparticle state is studied, and operation of the device as a bipolar spin filter is suggested.

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PubMed2004

Inductive single-electron transistor.

We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity 1.4 x 10(-4) e/square root Hz, limited by a preamplifier, is achieved in an operation mode which takes advantage of the nonlinearity of the Josephson potential. Owing to reactive readout, our setup has more than 2 orders of magnitude lower dissipation than the existing method of radio-frequency electrometry. With an optimized sample, we expect uncoupled energy sensitivity below variant Planck's over h in the same experimental scheme.

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PubMed2004

Sensitivity and linearity of superconducting radio-frequency single-electron transistors: effects of quantum charge fluctuations.

We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (rf-SETs) for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, subgap rf-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Surprisingly, such rf-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity.

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PubMed2002

Evidence for suppression of superconductivity by spin imbalance in Co-Al-Co single-electron transistors.

Spin imbalance can lead to suppression of superconductivity. We report the phenomena manifesting this effect under spin-polarized quasiparticle currents in ferromagnet-superconductor-ferromagnet single-electron transistors. The measured superconducting gap as a function of magnetic field reveals a dramatic decrease when the magnetizations of the two leads are misaligned. The effect of suppression increases with increasing source-drain voltage. A comparison with theoretical calculations is presented. This method may render it applicable to control superconductivity at low temperatures within low fields.

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PubMed2003

Nanometre-scale displacement sensing using a single electron transistor.

It has been a long-standing goal to detect the effects of quantum mechanics on a macroscopic mechanical oscillator. Position measurements of an oscillator are ultimately limited by quantum mechanics, where 'zero-point motion' fluctuations in the quantum ground state combine with the uncertainty relation to yield a lower limit on the measured average displacement. Development of a position transducer, integrated with a mechanical resonator, that can approach this limit could have important applications in the detection of very weak forces, for example in magnetic resonance force microscopy and a variety of other precision experiments. One implementation that might allow near quantum-limited sensitivity is to use a single electron transistor (SET) as a displacement sensor: the exquisite charge sensitivity of the SET at cryogenic temperatures is exploited to measure motion by capacitively coupling it to the mechanical resonator. Here we present the experimental realization of such a device, yielding an unequalled displacement sensitivity of 2 x 10(-15) m x Hz(-1/2) for a 116-MHz mechanical oscillator at a temperature of 30 mK-a sensitivity roughly a factor of 100 larger than the quantum limit for this oscillator.

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PubMed1997

A Silicon Single-Electron Transistor Memory Operating at Room Temperature

A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate. Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.

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PubMed2003

Two-channel Kondo effect in a modified single electron transistor.

We suggest a simple system of two electron droplets which should display two-channel Kondo behavior at experimentally accessible temperatures. Stabilization of the two-channel Kondo fixed point requires fine control of the electrochemical potential in each droplet, which can be achieved by adjusting voltages on nearby gate electrodes. We study the conditions for obtaining this type of two-channel Kondo behavior, discuss the experimentally observable consequences, and explore the generalization to the multichannel Kondo case.

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PubMed1990