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At least 19 recordsLinked to original sources

PubMed1997

Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges

A single-electron transistor scanning electrometer (SETSE)-a scanned probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an electron-has been developed. The active sensing element of the SETSE, a single-electron transistor fabricated at the end of a sharp glass tip, is scanned in close proximity across the sample surface. Images of the surface electric fields of a GaAs/AlxGa1-xAs heterostructure sample show individual photo-ionized charge sites and fluctuations in the dopant and surface-charge distribution on a length scale of 100 nanometers. The SETSE has been used to image and measure depleted regions, local capacitance, band bending, and contact potentials at submicrometer length scales on the surface of this semiconductor sample.

Journal Article↗

PubMed2003

Single-electron transistor of a single organic molecule with access to several redox states.

A combination of classical Coulomb charging, electronic level spacings, spin, and vibrational modes determines the single-electron transfer reactions through nanoscale systems connected to external electrodes by tunnelling barriers. Coulomb charging effects have been shown to dominate such transport in semiconductor quantum dots, metallic and semiconducting nanoparticles, carbon nanotubes, and single molecules. Recently, transport has been shown to be also influenced by spin--through the Kondo effect--for both nanotubes and single molecules, as well as by vibrational fine structure. Here we describe a single-electron transistor where the electronic levels of a single pi-conjugated molecule in several distinct charged states control the transport properties. The molecular electronic levels extracted from the single-electron-transistor measurements are strongly perturbed compared to those of the molecule in solution, leading to a very significant reduction of the gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital. We suggest, and verify by simple model calculations, that this surprising effect could be caused by image charges generated in the source and drain electrodes resulting in a strong localization of the charges on the molecule.

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PubMed2003

Nonequilibrium plasmons in a quantum wire single-electron transistor.

We analyze a single-electron transistor composed of two semi-infinite one-dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady-state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.

Journal Article↗

PubMed2007

Probing spin accumulation in Ni/Au/Ni single-electron transistors with efficient spin injection and detection electrodes.

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au disks, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain, and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. By use of an atomic force microscope with specially designed software, a single nonmagnetic Au nanodisk is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real time while the Au disk is manipulated step-by-step with angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disk. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few nanoseconds on the spin-relaxation time for electrons in the Au disk. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the single-electron transistors. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum tunneling magnetoresistance of 10%, from which we deduced a spin polarization of about 22% in the Ni electrodes.

Electrodes↗

PubMed2005

Template guided self-assembling two-dimensional array of Au@SiO2 core-shell nanoparticles for room-temperature single electron transistors.

The composite nanoparticles of a gold core capped by a SiO2 shell with well-controlled thickness have been synthesized and fabricated into two-dimensional array on silicon surface by a simple self-assembly method combined with an AFM nanolithography technique. Current-voltage measurements of the Au@SiO2 composite nanoparticles (shell thickness of 6 nm) show a well-pronounced Coulomb staircase with a period of 300 mV at room temperature, demonstrating single electron transistor behavior. The step width of the Coulomb staircase can be tuned by controlling the thickness of SiO2 shell. The tunable single electron tunneling properties make the 2D array of Au@SiO2 composite nanoparticles an ideal candidate for planar single electron transistor devices.

Colloids↗

PubMed2004

Photon-induced Kondo satellites in a single-electron transistor.

We measure the differential conductance of a single-electron transistor (SET) irradiated with microwaves. The spin-entangled many-electron Kondo state produces a zero-bias peak in the dc differential conductance if the quantum dot in the SET contains an unpaired electron. When the photon energy hf is comparable to the energy width of the Kondo peak and to e (the charge on the electron) times the microwave voltage across the dot, satellites appear in the differential conductance shifted in voltage by +/-hf/e from the zero-bias resonance. We also observe an overall suppression of the Kondo features with increasing microwave voltage.

Journal Article↗

PubMed2001

Carbon nanotube single-electron transistors at room temperature.

Room-temperature single-electron transistors are realized within individual metallic single-wall carbon nanotube molecules. The devices feature a short (down to approximately 20 nanometers) nanotube section that is created by inducing local barriers into the tube with an atomic force microscope. Coulomb charging is observed at room temperature, with an addition energy of 120 millielectron volts, which substantially exceeds the thermal energy. At low temperatures, we resolve the quantum energy levels corresponding to the small island. We observe unconventional power-law dependencies in the measured transport properties for which we suggest a resonant tunneling Luttinger-liquid mechanism.

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PubMed2004

Quantum shuttle phenomena in a nanoelectromechanical single-electron transistor.

An analytical analysis of quantum shuttle phenomena in a nanoelectromechanical single-electron transistor has been performed in the realistic case, when the electron tunneling length is much greater than the amplitude of the zero point oscillations of the central island. It is shown that when the dissipation is below a certain threshold value, the vibrational ground state of the central island is unstable. The steady state into which this instability develops is studied. It is found that if the electric field E between the leads is much greater than a characteristic value E(q), the quasiclassical shuttle picture is recovered, while if E< 0) shuttle vibrations.

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PubMed2004

Giant fluctuations of superconducting order parameter in ferromagnet-superconductor single-electron transistors.

Spin dependent transport in a ferromagnet-superconductor single-electron transistor is studied theoretically taking into account spin accumulation, spin relaxation, gap suppression, and charging effects. A strong dependence of the gap on the magnetic state of the electrodes is found, which gives rise to a magnetoresistance of up to 100%. We predict that fluctuations of the spin accumulation can play such an important role as to cause the island to fluctuate between the superconducting and normal states. Furthermore, the device exhibits a nearly complete gate-controlled spin-valve effect.

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PubMed2006

A single electron transistor on an atomic force microscope probe.

We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.

Electrons↗

PubMed2006

Label-free "digital detection" of single-molecule DNA hybridization with a single electron transistor.

Here we present a novel assay that eliminates fluorescent labels and enables "digital detection" of single-molecule DNA hybridization in complex matrixes with greatly simplified protocols. Electronic coupling of the binding state of a single oligonucleotide to the quantum dot (QD) of a single electron transistor (SET) affords direct observation of binding events in real-time via "molecular gating". The change of electrostatic charge associated with the molecular capture is used in lieu of a gate electrode to modulate the SET conductivity. Target oligos containing base mismatches do not elicit SET response under 0.1X SSC at room temperature nor do changes in ionic strength or pH. Furthermore, hybridization is detected even in optically inaccessible matrixes such as serum or quanidinium thiocyanate lysis buffer.

DNA, Single-Stranded↗

PubMed2006

Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor.

We observe low-field hysteretic magnetoresistance in a (Ga,Mn)As single-electron transistor which can exceed 3 orders of magnitude. The sign and size of the magnetoresistance signal are controlled by the gate voltage. Experimental data are interpreted in terms of electrochemical shifts associated with magnetization rotations. This Coulomb blockade anisotropic magnetoresistance is distinct from previously observed anisotropic magnetoresistance effects as it occurs when the anisotropy in a band structure derived parameter is comparable to an independent scale, the single-electron charging energy. Effective kinetic-exchange model calculations in (Ga,Mn)As show chemical potential anisotropies consistent with experiment and ab initio calculations in transition metal systems suggest that this generic effect persists to high temperatures in metal ferromagnets with strong spin-orbit coupling.

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PubMed2001

Effects of dissipation on a superconducting single electron transistor.

We measure the effect of dissipation on the minimum zero-bias conductance, G(min)0, of a superconducting single electron transistor (sSET) capacitively coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Depleting the 2DEG with a back gate voltage decreases the dissipation experienced by the sSET in situ. We find that G(min)0 increases as the dissipation is increased or the temperature is reduced; the functional forms of these dependences are compared with the model of Wilhelm et al. in which the leads coupled to the sSET are represented by lossy transmission lines.

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PubMed2006

Full counting statistics for a single-electron transistor: nonequilibrium effects at intermediate conductance.

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.

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PubMed2002

Full frequency back-action spectrum of a single-electron transistor during qubit readout.

We calculate the spectral density of voltage fluctuations in a single-electron transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency shot noise to quantum noise at frequencies comparable to the SET charging energy (EC/h) is considered. We discuss the back-action during readout of a charge qubit and conclude that single-shot readout is possible using the radio-frequency SET.

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PubMed2001

Mesoscopic Kondo screening effect in a single-electron transistor embedded in a metallic ring.

We study the Kondo screening effect generated by a single-electron transistor or quantum dot embedded in a small metallic ring. When the ring circumference L becomes comparable to the fundamental length scale xi(0)(K) = Planck's constant over upsilon(F)/T(0)(K) associated with the bulk Kondo temperature, the Kondo resonance is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persistent currents are also calculated in both Kondo and mixed-valence regimes, and the maximum values are found in the crossover region.

Journal Article↗

PubMed2005

Quantum criticality in ferromagnetic single-electron transistors.

Considerable evidence exists for the failure of the traditional theory of quantum critical points, pointing to the need to incorporate novel excitations. The destruction of Kondo entanglement and the concomitant critical Kondo effect may underlie these emergent excitations in heavy fermion metals (a prototype system for quantum criticality), but the effect remains poorly understood. Here, we show how ferromagnetic single-electron transistors can be used to study this effect. We theoretically demonstrate a gate-voltage-induced quantum phase transition. The critical Kondo effect is manifested in a fractional-power-law dependence of the conductance on temperature (T). The AC conductance and thermal noise spectrum have related power-law dependences on frequency (omega) and, in addition, show an omega/T scaling. Our results imply that the ferromagnetic nanostructure constitutes a realistic model system to elucidate magnetic quantum criticality that is central to the heavy fermions and other bulk materials with non-Fermi liquid behavior.

Chemistry↗

PubMed2004

Measurements of Kondo and spin splitting in single-electron transistors.

We measure the spin splitting in a magnetic field B of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most precise value of the Zeeman energy Delta=/g/mu(B)B. In the same devices we also measure the splitting with B of the Kondo peak in differential conductance. The Kondo splitting appears only above a threshold field as predicted by theory. However, the magnitude of the Kondo splitting at high fields exceeds 2/g/mu(B)B in disagreement with theory.

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