XTEM sample preparation technique for n-type compound semiconductors using photochemical etching.

S Tanaka; H Fujii; M Hibino

doi:10.1002/(sici)1097-0029(19961101)35:4<363::aid-jemt10>3.0.co;2-t

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XTEM sample preparation technique for n-type compound semiconductors using photochemical etching.

S Tanaka·H Fujii·M Hibino

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Abstract

A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsP/InP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol solution, gave high quality, damage-free XTEM images. The PCE technique is applicable to other n-type compound semiconductors.

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Microscopy, Electron Photochemistry Semiconductors Journal Article

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S Tanaka, H Fujii, M Hibino. 1996-11-01. XTEM sample preparation technique for n-type compound semiconductors using photochemical etching.. https://doi.org/10.1002/(sici)1097-0029(19961101)35%3A4%3C363%3A%3Aaid-jemt10%3E3.0.co%3B2-t

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